6
RF Device Data
Freescale Semiconductor
MRF6S27085HR3 MRF6S27085HSR3
TYPICAL CHARACTERISTICS
?70
?30
?40
?45
?50
?60
?35
?55
?65
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
1 10010
?60
0
0.1
7th Order
TWO?TONE SPACING (MHz)
VDD
= 28 Vdc, P
out
= 85 W (PEP), I
DQ
= 900 mA
Two?Tone Measurements
(f1 + f2)/2 = Center Frequency of 2645 MHz
5th Order
3rd Order
?10
?20
?30
?40
?50
Figure 8. Pulsed CW Output Power versus
Input Power
Figure 9. Single-Carrier N-CDMA ACPR, ALT1,
Power Gain and Drain Efficiency versus Output
Power
5
Pout, OUTPUT POWER (WATTS) AVG. W?CDMA
45
35
30
10
10 100
20
40
56
31
Pin, INPUT POWER (dBm)
54
52
50
46
32 3433 3635 3937
38
55
51
53
49
30
0
20
5
45
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
VDD
= 28 Vdc, I
DQ
= 900 mA
f = 2645 MHz
10
17.5
15
10
5
2.5
40
30
25
20
15
10
Figure 11. Power Gain versus Output Power
Pout, OUTPUT POWER (WATTS) CW
VDD
= 24 V
ACPR
η
D
, DRAIN EFFICIENCY (%), G
ps
, POWER GAIN (dB)
IMD, INTERMODULATION DISTORTION (dBc)
ACPR (dBc), ALT1 (dBc)
η
D
,
DRAIN EFFICIENCY (%)
ηD
G
ps
, POWER GAIN (dB)
11
16
1 10010
13
12
15
14
IDQ
= 900 mA
f = 2645 MHz
P
out
, OUTPUT POWER (dBm)
G
ps
, POWER GAIN (dB)
48
47
ηD
100
32 V
Actual
Ideal
P1dB = 51 dBm (126.74 W)
P3dB = 51.72 dBm (148.54 W)
40
25
15
VDD= 28 Vdc, IDQ
= 900 mA, f = 2645 MHz
Single?Carrier N?CDMA, 1.2288 MHz
Channel Bandwidth, PAR = 9.8 dB
@ 0.01% Probability (CCDF)
ALT1
12.5
7.5
35
28 V
Gps
Gps
VDD
= 28 Vdc, I
DQ
= 900 mA
Pulsed CW, 8 μsec(on), 1 msec(off)
f = 2645 MHz